AYELE, Yasab; YOHANNES, Zena; BENOR, Amare. Effect of phosphorus dopant concentration on the carrier mobility in crystalline silicon. Ethiopian Journal of Science and Technology, [S. l.], v. 9, n. 2, p. 113–122, 2025. Disponível em: https://journals.bdu.edu.et/index.php/EJST/article/view/2040. Acesso em: 7 apr. 2026.