AYELE, Y.; YOHANNES, Z.; BENOR, A. Effect of phosphorus dopant concentration on the carrier mobility in crystalline silicon. Ethiopian Journal of Science and Technology, [S. l.], v. 9, n. 2, p. 113–122, 2025. Disponível em: https://journals.bdu.edu.et/index.php/EJST/article/view/2040. Acesso em: 4 feb. 2026.